W9816G6JB
512K 2 BANKS 16 BITS SDRAM
Table of Contents1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
GENERAL DESCRIPTION ......................................................................................................... 3
FEATURES ................................................................................................................................. 3
ORDER INFORMATION ............................................................................................................. 4
BALL CONFIGURATION ............................................................................................................ 4
BALL DESCRIPTION .................................................................................................................. 5
BLOCK DIAGRAM ...................................................................................................................... 6
FUNCTIONAL DESCRIPTION.................................................................................................... 7
7.1
Power Up and Initialization ............................................................................................. 7
7.2
Programming Mode Register .......................................................................................... 7
7.3
Bank Activate Command ................................................................................................ 7
7.4
Read and Write Access Modes ...................................................................................... 7
7.5
Burst Read Command .................................................................................................... 8
7.6
Burst Write Command .................................................................................................... 8
7.7
Read Interrupted by a Read ........................................................................................... 8
7.8
Read Interrupted by a Write ............................................................................................ 8
7.9
Write Interrupted by a Write ............................................................................................ 8
7.10 Write Interrupted by a Read ............................................................................................ 8
7.11 Burst Stop Command ..................................................................................................... 9
7.12 Addressing Sequence of Sequential Mode .................................................................... 9
7.13 Addressing Sequence of Interleave Mode ...................................................................... 9
7.14 Auto-precharge Command ........................................................................................... 10
7.15 Precharge Command .................................................................................................... 10
7.16 Self Refresh Command ................................................................................................ 10
7.17 Power Down Mode ....................................................................................................... 11
7.18 No Operation Command ............................................................................................... 11
7.19 Deselect Command ...................................................................................................... 11
7.20 Clock Suspend Mode .................................................................................................... 11
OPERATION MODE ................................................................................................................. 12
ELECTRICAL CHARACTERISTICS ......................................................................................... 13
9.1
Absolute Maximum Ratings .......................................................................................... 13
9.2
Recommended DC Operating Conditions .................................................................... 13
9.3
Capacitance .................................................................................................................. 13
9.4
DC Characteristics ........................................................................................................ 14
9.5
AC Characteristics ........................................................................................................ 15
TIMING WAVEFORMS ............................................................................................................. 17
10.1 Command Input Timing ................................................................................................ 17
10.2 Read Timing.................................................................................................................. 18
10.3 Control Timing of Input/Output Data ............................................................................. 19
10.4 Mode Register Set Cycle .............................................................................................. 20
OPERATING TIMING EXAMPLE ............................................................................................. 21
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
12.
13.
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) ...................................... 21
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ........... 22
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) ...................................... 23
11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ........... 24
11.5 Interleaved Bank Write (Burst Length = 8) ................................................................... 25
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) .............................................. 27
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ................................... 28
11.9 Auto Precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 29
11.10 Auto Precharge Write (Burst Length = 4) .................................................................... 30
11.11 Auto Refresh Cycle ..................................................................................................... 31
11.12 Self Refresh Cycle ....................................................................................................... 32
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)............................ 33
11.14 Power Down Mode ...................................................................................................... 34
11.15 Auto-precharge Timing (Read Cycle) .......................................................................... 35
11.16 Auto-precharge Timing (Write Cycle) .......................................................................... 36
11.17 Timing Chart of Read to Write Cycle ........................................................................... 37
11.18 Timing Chart of Write to Read Cycle ........................................................................... 37
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command) .......................................... 38
11.20 Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 38
11.21 CKE/DQM Input Timing (Write Cycle) ......................................................................... 39
11.22 CKE/DQM Input Timing (Read Cycle) ......................................................................... 40
PACKAGE SPECIFICATION .................................................................................................... 41
REVISION HISTORY ................................................................................................................ 42
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
1. GENERAL DESCRIPTION
W9816G6JB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words 2 banks 16 bits. W9816G6JB delivers a data bandwidth of up to 200M words per
second. To fully comply with the personal computer industrial standard, W9816G6JB is sorted into the
following speed grades: -5, -6, -6I, -7 and -7I.
The -5 grade parts can run up to 200MHz/CL3.
The -6 and -6I grade parts can run up to 166MHz/CL3 (the -6I industrial grade parts which is
guaranteed to support -40°C ≤ TA ≤ 85°C).
The -7 and -7I grade parts can run up to 143MHz/CL3 (the -7I industrial grade parts which is
guaranteed to support -40°C ≤ TA ≤ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9816G6JB is ideal for main memory in
high performance applications.
2. FEATURES
3.3V ± 0.3V power supply for -5/-6/-6I speed grades
2.7V~3.6V power supply for -7/-7I speed grades
Up to 200 MHz Clock Frequency
524,288 words x 2 banks x 16 bits organization
Self Refresh current: standard and low power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Auto-precharge and Controlled Precharge
2K Refresh Cycles/32 mS
Interface: LVTTL
Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
3. ORDER INFORMATION
SELF REFRESH CURRENT
(MAX)
OPERATING
TEMPERATURE
PART NUMBER
SPEED GRADE
W9816G6JB-5
200MHz/CL3
2mA
0°C ~ 70°C
W9816G6JB-6
166MHz/CL3
2mA
0°C ~ 70°C
W9816G6JB-6I
166MHz/CL3
2mA
-40°C ~ 85°C
W9816G6JB-7
143MHz/CL3
2mA
0°C ~ 70°C
W9816G6JB-7I
143MHz/CL3
2mA
-40°C ~ 85°C
4. BALL CONFIGURATION
Top View
1 2
Bottom View
6 7
7 6
2 1
A
VSS
DQ15
DQ0
VDD
VDD
DQ0
DQ15
VSS
A
B
DQ14
VSSQ
VDDQ
DQ1
DQ1
VDDQ
VSSQ
DQ14
B
C
DQ13
VDDQ
VSSQ
DQ2
DQ2
VSSQ
VDDQ
DQ13
C
D
DQ12
DQ11
DQ4
DQ3
DQ3
DQ4
DQ11
DQ12
D
E
DQ10
VSSQ
VDDQ
DQ5
DQ5
VDDQ
VSSQ
DQ10
E
F
DQ9
VDDQ
VSSQ
DQ6
DQ6
VSSQ
VDDQ
DQ9
F
G
DQ8
NC
NC
DQ7
DQ7
NC
NC
DQ8
G
H
NC
NC
NC
NC
NC
NC
NC
NC
H
J
NC
UDQM
LDQM
WE#
WE#
LDQM UDQM
NC
J
K
NC
CLK
RAS#
CAS#
CAS#
RAS#
CLK
NC
K
L
CKE
NC
NC
CS#
CS#
NC
NC
CKE
L
M
BA
A9
NC
NC
NC
NC
A9
BA
M
N
A8
A7
A0
A10
A10
A0
A7
A8
N
P
A6
A5
A2
A1
A1
A2
A5
A6
P
R
VSS
A4
A3
VDD
VDD
A3
A4
VSS
R
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
5. BALL DESCRIPTION
Ball-Location
Ball Name
Function
N6, P7, P6, R6,
R2, P2, P1, N2,
N1, M2, N7
A0A10
Address
M1
BA
Bank Address
A6, B7, C7, D7,
D6, E7, F7, G7,
DQ0DQ15
G1, F1, E1, D2,
D1, C1, B1, A2,
Description
Multiplexed pins for row and column address.
Row address: A0A10. Column address: A0A7.
Select bank to activate during row address latch
time, or bank to read/write during column address
latch time.
Data Input/
Output
Multiplexed pins for data input and output.
L7
CS
Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
K6
RAS
Row Address
Strobe
Command input. When sampled at the rising edge of
the clock, RAS , CAS and WE define the
operation to be executed.
K7
CAS
J7
WE
Write Enable
Referred to RAS
J2/J6
UDQM/
LDQM
Input/Output
Mask
The output buffer is placed at Hi-Z (with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
K2
CLK
Clock Inputs
System clock used to sample inputs on the rising
edge of clock.
L1
CKE
Clock Enable
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend
mode, or Self Refresh mode is entered.
A7, R7
VDD
Power
Power for input buffers and logic circuit inside
DRAM.
A1, R1
VSS
Ground
Ground for input buffers and logic circuit inside
DRAM.
B6, C2, E6, F2
VDDQ
Power for I/O
buffer
Separated power from VDD, used for output buffers
to improve noise immunity.
B2, C6, E2, F6
VSSQ
Ground for I/O
buffer
Separated ground from VSS, used for output buffers
to improve noise immunity.
G2, G6, H1, H2,
H6, H7, J1, K1,
L2, L6, M6, M7
NC
No Connection
No connection. (NC pin should be connected to GND
or floating)
Column Address
Referred to RAS
Strobe
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
6. BLOCK DIAGRAM
CLK
CLOCK
BUFFER
CKE
CS
CONTROL
SIGNAL
RAS
CAS
GENERATOR
COMMAND
DECODER
COLUMN DECODER
R
O
W
D
E
C
O
D
E
R
WE
CELL ARRAY
BANK #0
SENSE AMPLIFIER
A10
MODE
REGISTER
A0
A9
BA
ADDRESS
BUFFER
DQ
BUFFER
DATA CONTROL
CIRCUIT
DQ0
DQ15
LDQM
UDQM
REFRESH
COUNTER
COLUMN
COUNTER
COLUMN DECODER
R
O
W
D
E
C
O
D
E
R
CELL ARRAY
BANK #1
SENSE AMPLIFIER
Note: The cell array configuration is 2048 * 256 * 16
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
7. FUNCTIONAL DESCRIPTION
7.1
Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and
initialization sequence need to be followed to guarantee the device being preconditioned to each user
specific needs during power up, all V DD and VDDQ pins must be ramp up simultaneously to the
specified voltage when the input signals are held in the “NOP” state. The power up voltage must not
exceed VDD + 0.3V on any of the input pins or VDD supplies. After power up, an initial pause of 200 µS
is required followed by a precharge of all banks using the precharge command. To prevent data
contention on the DQ bus during power up, it is required that the DQM and CKE pins be held high
during the initial pause period. Once all banks have been precharged, the Mode Register Set
Command must be issued to initialize the Mode Register. An additional eight Auto Refresh cycles
(CBR) are also required before or after programming the Mode Register to ensure proper subsequent
operation.
7.2
Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation.
All banks must be in a precharged state and CKE must be high at least one cycle before the Mode
Register Set Command can be issued. The Mode Register Set Command is activated by the low
signals of RAS , CAS , CS and WE at the positive edge of the clock. The address input data
during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A
new command may be issued following the mode register set command once a delay equal to t RSC
has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
7.3
Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed.
The delay from when the Bank Activate command is applied to when the first read or write operation
can begin must not be less than the RAS to CAS delay time (t RCD). Once a bank has been activated it
must be precharged before another Bank Activate command can be issued to the same bank. The
minimum time interval between successive Bank Activate commands to the same bank is determined
by the RAS cycle time of the device (tRC). The minimum time interval between interleaved Bank
Activate commands (Bank A to Bank B and vice versa) is the Bank-to-Bank delay time (tRRD). The
maximum time that each bank can be held active is specified as t RAS(max.).
7.4
Read and Write Access Modes
After a bank has been activated, a read or write cycle can be followed. This is accomplished by setting
RAS high and CAS low at the clock rising edge after minimum of t RCD delay. WE pin voltage level
defines whether the access cycle is a read operation ( WE high), or a write operation ( WE low). The
address inputs determine the starting column address. Reading or writing to a different row within an
activated bank requires the bank be precharged and a new Bank Activate command be issued. When
more than one bank is activated, interleaved bank Read or Write operations are possible. By using the
programmed burst length and alternating the access and precharge operations between multiple
banks, seamless data access operation among many different pages can be realized. Read or Write
Commands can also be issued to the same bank or between active banks on every clock cycle.
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
7.5
Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding
RAS and WE high at the rising edge of the clock. The address inputs determine the starting column
address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst
length (1, 2, 4, 8 and full page) during the Mode Register Set Up cycle.
7.6
Burst Write Command
The Burst Write command is initiated by applying logic low level to CS , CAS and WE while
holding RAS high at the rising edge of the clock. The address inputs determine the starting column
address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle
that the Write Command is issued. The remaining data inputs must be supplied on each subsequent
rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes
will be ignored.
7.7
Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted,
the remaining addresses are overridden by the new read address with the full burst length. The data
from the first Read Command continues to appear on the outputs until the CAS Latency from the
interrupting Read Command the is satisfied.
7.8
Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output
drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will
issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the
DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM
masking is no longer needed.
7.9
Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the
previous burst is interrupted, the remaining addresses are overridden by the new address and data
will be written into the device until the programmed burst length is satisfied.
7.10 Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read
Command is activated. The DQs must be in the high impedance state at least one cycle before the
new read data appears on the outputs to avoid data contention. When the Read Command is
activated, any residual data from the burst write cycle will be ignored.
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
7.11 Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open
for future Read or Write Commands to the same page of the active bank, if the burst length is full
page. Use of the Burst Stop Command during other burst length operations is illegal. The Burst Stop
Command is defined by having RAS and CAS high with CS and WE low at the rising edge of
the clock. The data DQs go to a high impedance state after a delay, which is equal to the CAS
Latency in a burst read cycle, interrupted by Burst Stop. If a Burst Stop Command is issued during a
full page burst write operation, then any residual data from the burst write cycle will be ignored.
7.12 Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address, which is input to
the device. The disturb address is varied by the Burst Length as shown in Table 2.
Table 2 Address Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
BL = 2 (disturb address is A0)
Data 1
n+1
No address carry from A0 to A1
Data 2
n+2
BL = 4 (disturb addresses are A0 and A1)
Data 3
n+3
No address carry from A1 to A2
Data 4
n+4
Data 5
n+5
BL = 8 (disturb addresses are A0, A1 and A2)
Data 6
n+6
No address carry from A2 to A3
Data 7
n+7
7.13 Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit
in the sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
Data 0
ACCESS ADDRESS
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
-9-
BURST LENGTH
BL = 2
BL = 4
BL = 8
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
7.14 Auto-precharge Command
If A10 is set to high when the Read or Write Command is issued, then the Auto-precharge function is
entered. During Auto-precharge, a Read Command will execute as normal with the exception that the
active bank will begin to precharge automatically before all burst read cycles have been completed.
Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled
burst cycle. The number of clocks is determined by CAS Latency.
A Read or Write Command with Auto-precharge can not be interrupted before the entire burst
operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during
a read or write cycle with Auto-precharge. Once the precharge operation has started, the bank cannot
be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-precharge command is
illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write
with Auto-precharge function is initiated. The SDRAM automatically enters the precharge operation
two clock delay from the last burst write cycle. This delay is referred to as Write tWR. The bank
undergoing Auto-precharge can not be reactivated until tWR and tRP are satisfied. This is referred to as
tDAL, Data-in to Active delay (tDAL = tWR + tRP). When using the Auto-precharge Command, the interval
between the Bank Activate Command and the beginning of the internal precharge operation must
satisfy tRAS(min).
7.15 Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The
Precharge Command is entered when CS , RAS and WE are low and CAS is high at the rising
edge of the clock. The Precharge Command can be used to precharge each bank separately or all
banks simultaneously. The address bits, A10, and BA, are used to define which bank(s) is to be
precharged when the command is issued. After the Precharge Command is issued, the precharged
bank must be reactivated before a new read or write access can be executed. The delay between the
Precharge Command and the Activate Command must be greater than or equal to the Precharge time
(tRP).
7.16 Self Refresh Command
The Self-Refresh Command is defined by having CS , RAS , CAS and CKE held low with WE
high at the rising edge of the clock. All banks must be idle prior to issuing the Self-Refresh Command.
Once the command is registered, CKE must be held low to keep the device in Self-Refresh mode.
When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are
disabled. The clock is internally disabled during Self-Refresh Operation to save power. The device will
exit Self-Refresh operation after CKE is returned high. Any subsequent commands can be issued after
tXSR from the end of Self Refresh command.
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
7.17 Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are
gated off to reduce the power. The Power Down mode does not perform any refresh operations;
therefore the device can not remain in Power Down mode longer than the Refresh period (t REF) of the
device.
The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation
Command is required on the next rising clock edge, depending on t CK. The input buffers need to be
enabled with CKE held high for a period equal to tCKS(min) + tCK(min).
7.18 No Operation Command
The No Operation Command should be used in cases when the SDRAM is in an idle or a wait state to
prevent the SDRAM from registering any unwanted commands between operations. A No Operation
Command is registered when CS is low with RAS , CAS and WE held high at the rising edge of
the clock. A No Operation Command will not terminate a previous operation that is still executing, such
as a burst read or write cycle.
7.19 Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect
Command occurs when CS is brought high, the RAS , CAS and WE signals become don't cares.
7.20 Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low
while at least one of the banks is active and a column access/burst is in progess, Clock Suspend
mode is entered. The Clock Suspend mode deactivates the internal clock and suspends any clocked
operation that was currently being executed. There is a one-clock delay between the registration of
CKE low and the time at which the SDRAM operation suspends. While in Clock Suspend mode, the
SDRAM ignores any new commands that are issued. The Clock Suspend mode is exited by bringing
CKE high. There is a one-clock cycle delay from when CKE returns high to when Clock Suspend
mode is exited.
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Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
8. OPERATION MODE
Fully synchronous operations are performed to latch the commands at the positive edges of CLK.
Table 1 shows the truth table for the operation commands.
TABLE 1 TRUTH TABLE (NOTE 1, 2)
COMMAND
DEVICE
STATE
CKEn-1
CKEn
DQM
BA
A10
A9-A0
CS
RAS
CAS
WE
Bank Active
Idle
H
X
X
V
V
V
L
L
H
H
Bank Precharge
Any
H
X
X
V
L
X
L
L
H
L
Precharge All
Any
H
X
X
X
H
X
L
L
H
L
Active (3)
H
X
X
V
L
V
L
H
L
L
Active
(3)
H
X
X
V
H
V
L
H
L
L
Read
Active
(3)
H
X
X
V
L
V
L
H
L
H
Read with Auto-precharge
Active (3)
H
X
X
V
H
V
L
H
L
H
Mode Register Set
Idle
H
X
X
V
V
V
L
L
L
L
No-Operation
Any
H
X
X
X
X
X
L
H
H
H
Active (4)
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
Auto-Refresh
Idle
H
H
X
X
X
X
L
L
L
H
Self-Refresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
Self-Refresh Exit
Idle
(S.R)
L
L
H
H
X
X
X
X
X
X
X
X
H
L
X
H
X
H
X
X
Clock Suspend Mode
Entry
Active
H
L
X
X
X
X
X
X
X
X
Power Down Mode Entry
Idle
Active (5)
H
H
L
L
X
X
X
X
X
X
X
X
H
L
X
H
X
H
X
X
Clock Suspend Mode Exit
Active
L
H
X
X
X
X
X
X
X
X
Any
(power down)
L
L
H
H
X
X
X
X
X
X
X
X
H
L
X
H
X
H
X
X
Data Write/Output Enable
Active
H
X
L
X
X
X
X
X
X
X
Data Write/Output Disable
Active
X
H
X
X
X
X
X
X
X
Write
Write with Auto-precharge
Burst Stop
Power Down Mode Exit
H
Notes :(1) V = Valid, X = Don't care, L = Low Level, H = High Level
(2) CKEn signal is input level when commands are provided.
CKEn-1 signal is the input level one clock cycle before the command is issued.
(3) These are state of bank designated by BA signals.
(4) Device state is full page burst operation.
(5) Power Down Mode can not be entered in the burst cycle.
When this command asserts in the burst cycle, device state is clock suspend mode.
- 12 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
9. ELECTRICAL CHARACTERISTICS
9.1
Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Voltage on any pin relative to VSS
VIN, VOUT -0.5 ~ VDD + 0.5 ( 4.6V max.)
V
1
Voltage on VDD/VDDQ supply relative to VSS
VDD, VDDQ
-0.5 ~ 4.6
V
1
Operating Temperature for -5/-6/-7
TOPR
0 ~ 70
°C
1
Operating Temperature for -6I/-7I
TOPR
-40 ~ 85
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
TSOLDER
260
°C
1
PD
1
W
1
IOUT
50
mA
1
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
Note:
Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device
9.2
Recommended DC Operating Conditions
PARAMETER
SYM.
MIN.
TYP.
MAX.
UNIT
NOTES
Power Supply Voltage for -5/-6/-6I
VDD
3.0
3.3
3.6
V
2
Power Supply Voltage for -7/-7I
VDD
2.7
3.3
3.6
V
2
Power Supply Voltage for -5/-6/-6I (for I/O Buffer)
VDDQ
3.0
3.3
3.6
V
2
Power Supply Voltage for -7/-7I (for I/O Buffer)
VDDQ
2.7
3.3
3.6
V
2
Input High Voltage
VIH
2.0
-
VDD + 0.3
V
2
Input Low Voltage
VIL
-0.3
-
0.8
V
2
Note: VIH (max.) = VDD/VDDQ +1.5V for pulse width ≤ 5 nS
VIL (min.) = VSS/VSSQ -1.5V for pulse width ≤ 5 nS
9.3
Capacitance
(VDD = 3.3V ± 0.3V, TA = 25°C, f = 1MHz)
PARAMETER
SYM.
MIN.
MAX.
UNIT
Input Capacitance (A0 to A10, BA, CS , RAS , CAS , WE , UDQM,
LDQM, CKE)
CI
-
4
pf
-
4
pf
-
5.5
pf
Input Capacitance (CLK)
Input/Output capacitance (DQ0 to DQ15)
CIO
Note: These parameters are periodically sampled and not 100% tested
- 13 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
9.4
DC Characteristics
(VDD = 3.3V ± 0.3V for -5/-6/-6I, VDD = 2.7V to 3.6V for -7/-7I, TA = 0 to 70°C for -5/-6/-7, TA= -40 to 85°C for -6I//-7I)
PARAMETER
SYM.
-5
-6/-6I
-7/-7I
MAX.
MAX.
MAX.
UNIT
NOTES
Operating Current
tCK = min., tRC = min.
Active precharge command
cycling without burst operation
1 Bank operation
IDD1
40
35
30
3
Standby Current
tCK = min., CS = VIH
VIH/L = VIH (min.)/VIL (max.)
CKE = VIH
IDD2
15
15
15
3
CKE = VIL
(Power Down Mode)
IDD2P
2
2
2
3
CKE = VIH
IDD2S
6
6
6
CKE = VIL
IDD2PS
(Power Down Mode)
2
2
2
Bank: Inactive state
Standby Current
CLK = VIL, CS = VIH
VIH/L=VIH (min.)/VIL (max.)
Bank: Inactive state
No Operating Current
tCK = min., CS = VIH(min)
mA
CKE = VIH
IDD3
25
23
20
CKE = VIL
(Power Down Mode)
IDD3P
6
6
6
Burst Operating Current
tCK = min.
Read/ Write command cycling
IDD4
60
55
50
3, 4
Auto Refresh Current
tCK = min.
Auto refresh command cycling
IDD5
45
40
35
3
Self Refresh Current
Self Refresh Mode
CKE = 0.2V
IDD6
2
2
2
Bank: Active state (2 Banks)
PARAMETER
Input Leakage Current
(0V ≤ VIN ≤ VDD, all other pins not under test = 0V)
Output Leakage Current
(Output disable , 0V ≤ VOUT ≤ VDDQ )
LVTTL Output “H” Level Voltage
(IOUT = -2 mA)
LVTTL Output “L” Level Voltage
(IOUT = 2 mA)
- 14 -
SYM.
MIN.
MAX.
UNIT
II(L)
-5
5
µA
IO(L)
-5
5
µA
VOH
2.4
-
V
VOL
-
0.4
V
NOTES
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
9.5
AC Characteristics
(VDD = 3.3V ± 0.3V for -5/-6/-6I, VDD = 2.7V to 3.6V for -7/-7I, TA = 0 to 70°C for -5/-6/-7, TA= -40 to 85°C for -6I//-7I)
-5
-6/-6I
-7/-7I
PARAMETER
SYM.
Ref/Active to Ref/Active Command Period
tRC
55
Active to Precharge Command Period
tRAS
40
Active to Read/Write Command Delay
Time
tRCD
15
18
20
Read/Write(a) to Read/Write(b)Command
tCCD
Period
1
1
1
Precharge to Active(b) Command Period
tRP
15
18
18
Active(a) to Active(b) Command Period
tRRD
10
12
14
2
2
2
2
2
2
Write Recovery Time
CLK Cycle Time
CL* = 2
CL* = 3
CL* = 2
CL* = 3
tWR
tCK
MIN.
MAX.
MIN.
MAX.
60
100000
42
MIN.
MAX.
UNIT NOTES
65
100000
45
100000
nS
tCK
nS
tCK
7
1000
8
1000
10
1000
5
1000
6
1000
7
1000
CLK High Level Width
tCH
2
2
2
8
CLK Low Level Width
tCL
2
2
2
8
Access Time from CLK
CL* = 2
CL* = 3
Output Data Hold Time
Output Data High
Impedance Time
tAC
tOH
CL* = 2
CL* = 3
6
5.5
5.5
4.5
5
5
2
tHZ
2
9
2
9
6
5.5
5.5
4.5
5
5
0
Output Data Low Impedance Time
tLZ
0
Power Down Mode Entry Time
tSB
0
Data-in-Set-up Time
tDS
1.5
1.5
1.5
8
Data-in Hold Time
tDH
0.7
0.7
1
8
Address Set-up Time
tAS
1.5
1.5
1.5
8
Address Hold Time
tAH
0.7
0.7
1
8
CKE Set-up Time
tCKS
1.5
1.5
1.5
8
CKE Hold Time
tCKH
0.7
0.7
1
8
Command Set-up Time
tCMS
1.5
1.5
1.5
8
Command Hold Time
tCMH
0.7
0.7
1
8
Refresh Time (2K Refresh Cycles)
tREF
Mode Register Set Cycle Time
tRSC
2
2
2
tCK
Exit self refresh to ACTIVE command
tXSR
70
72
75
nS
5
0
32
0
7
6
0
32
nS
9
7
32
mS
* CL = CAS Latency
- 15 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
Notes:
1. Operation exceeds “Absolute Maximum Ratings” may cause permanent damage to the devices.
2. All voltages are referenced to VSS.
• 3.3V ± 0.3V power supply for -5/-6/-6I speed grades.
• 2.7V~3.6V power supply for -7/-7I speed grades.
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum
values of tCK and tRC.
4. These parameters depend on the output loading conditions. Specified values are obtained with output open.
5. Power up sequence please refer to “Functional Description” section described before.
6. AC test load diagram .
1.4 V
50 ohms
output
Z = 50 ohms
30pF
AC TEST LOAD
7. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to output
level.
8. Assumed input rise and fall time (tT) = 1nS.
If tr & tf is longer than 1nS, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]nS should be added to the parameter
9. If clock rising time (tT) is longer than 1nS, (tT/2-0.5)nS should be added to the parameter.
- 16 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
10. TIMING WAVEFORMS
10.1 Command Input Timing
tCL
tCK
tCH
VIH
CLK
VIL
tT
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tAS
tAH
tCMH
tT
tCMS
CS
RAS
CAS
WE
A0-A10
BA
tCKS
tCKH
tCKS
tCKH
tCKS
tCKH
CKE
- 17 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
10.2 Read Timing
Read CAS Latency
CLK
CS
RAS
CAS
WE
A0-A10
BA
tAC
tAC
tLZ
tHZ
tOH
tOH
Valid
Data-Out
Valid
Data-Out
DQ
Read Command
Burst Length
- 18 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
10.3 Control Timing of Input/Output Data
Control Timing of Input Data
(Word Mask)
CLK
tCMS
tCMH
tCMH
tCMS
DQM
tDS
tDH
tDS
tDS
Valid
Data-in
Valid
Data-in
DQ0~15
tDH
tDH
tDS
tDH
Valid
Data-in
Valid
Data-in
(Clock Mask)
CLK
tCKH
tCKS
tCKH
tDH
tDS
tDH
tCKS
CKE
tDS
DQ0~15
Valid
Data-in
tDS
Valid
Data-in
tDH
tDS
tDH
Valid
Data-in
Valid
Data-in
Control Timing of Output Data
(Output Enable)
CLK
tCMS
tCMH
tCMH
tCMS
DQM
tAC
tOH
tAC
tLZ
Valid
Data-Out
Valid
Data-Out
DQ0~15
tAC
tHZ
tOH
tOH
tAC
tOH
Valid
Data-Out
OPEN
(Clock Mask)
CLK
tCKS
tCKH
tCKH
tCKS
CKE
DQ0~15
tAC
tAC
tAC
tAC
tOH
tOH
tOH
Valid
Data-Out
Valid
Data-Out
- 19 -
tOH
Valid
Data-Out
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
10.4 Mode Register Set Cycle
tRSC
CLK
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tAS
tAH
CS
RAS
CAS
WE
A0-A10
BA
Register
set data
A0
A1
Burst Length
A2
A3
Addressing Mode
A4
A5
CAS Latency
next
command
A0
A0 A0
A2 A1
0 A0
0
0
0 A0
0
1
0 A0
1
0
0 A0
1
1
1 A0
0
0
1 A0
0
1
1 A0
1
0
1 A0
1
1
A0
A3
A0
0
A0
1
A6
A0
A7
"0"
(Test Mode)
A8
"0"
Reserved
Write Mode
A9
A10
"0"
A0
BA
"0"
Reserved
A6
0
0
0
0
1
A0
A5
A0
0
A0
0
A0
1
A0
1
A0
0
A0
A9
A0
0
A0
1
- 20 -
BurstA0
Length
A0
A0
Sequential
Interleave
1
A0
1
A0
A0
2
2
A0
A0
4
4
A0
A0
8
8
A0
Reserved
A0
Reserved
FullA0
Page
A0 Mode
Addressing
A0
Sequential
A0
Interleave
A4
0
1
0
1
0
CAS A0
Latency
A0
Reserved
A0
Reserved
2
A0
3
Reserved
Single Write Mode
A0 Burst write
Burst read and
A0 single write
Burst read and
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11. OPERATING TIMING EXAMPLE
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
6
5
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
tRC
tRC
tRC
RAS
tRAS
tRP
tRAS
tRAS
tRP
tRP
tRAS
CAS
WE
BA
tRCD
A10
RAa
A0-A9
RAa
tRCD
tRCD
RBb
CAw
tRCD
RAc
CBx
RBb
RBd
RAc
CAy
RAe
RBd
CBz
RAe
DQM
CKE
DQ
aw0
tRRD
Bank #0 Active
Bank #1
tAC
tAC
tAC
aw1
aw2
aw3
bx0
Precharge
Active
bx2
bx3
Active
- 21 -
cy1
cy2
cy3
tRRD
Precharge
Read
Precharge
Read
tAC
cy0
tRRD
tRRD
Read
bx1
Active
Active
Read
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
tRC
tRC
tRC
RAS
tRAS
tRP
tRAS
tRP
tRAS
tRP
tRAS
CAS
WE
BA
tRCD
tRCD
A10
RAa
A0-A9
RAa
RBb
CAw
tRCD
tRCD
RBd
RAc
CBx
RBb
CAy
RAc
RAe
CBz
RBd
RAe
DQM
CKE
tAC
tAC
DQ
aw0
tRRD
Bank #0
Bank #1
Active
aw1
aw2
aw3
tAC
bx0
bx1
Active
AP*
Active
bx3
tAC
cy0
cy1
tRRD
tRRD
Read
bx2
Read
cy3
dz0
tRRD
AP*
Read
AP*
cy2
Active
Active
Read
* AP is the internal precharge start timing
- 22 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
t RC
RAS
t RAS
tRP
t RAS
tRP
CAS
WE
BA
t RCD
A10
RAa
A0-A9
RAa
t RCD
t RCD
RAc
RBb
CAx
RBb
CBy
RAc
CAz
DQM
CKE
tAC
DQ
tAC
ax0
ax1
t RRD
Bank #0
Bank #1
Active
ax2
ax3
ax4
by0
by1
by4
by5
by6
by7
CZ0
t RRD
Read
Precharge
ax6
ax5
tAC
Precharge
Active
Read
- 23 -
Active
Read
Precharge
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tRC
CS
RAS
tRAS
tRAS
tRP
tRAS
tRP
CAS
WE
BA
tRCD
A10
RAa
A0-A9
RAa
tRCD
tRCD
RAc
RBb
CAx
RAc
CBy
RBb
CAz
DQM
CKE
tAC
DQ
ax0
ax1
ax2
tRRD
Bank #0
Bank #1
Active
tAC
tAC
ax3
ax4
ax5
ax6
ax7
by0
by1
by4
Active
Read
by5
by6
CZ0
tRRD
AP*
Read
Active
Read
AP*
* AP is the internal precharge start timing
- 24 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.5 Interleaved Bank Write (Burst Length = 8)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRAS
tRP
tRAS
tRAS
tRP
CAS
WE
BA
tRCD
tRCD
A10
RAa
A0-A9
RAa
tRCD
RBb
CAx
RAb
RBb
CBy
CAz
RAc
DQM
CKE
ax0
DQ
ax1
ax4
ax5
ax6
ax7
by0
by1
Bank #1
Active
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
tRRD
tRRD
Bank #0
by2
Write
Active
AP*
Active
Write
AP*
Write
* AP is the internal precharge start timing
- 25 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRAS
tRP
tRAS
tRAS
tRP
CAS
WE
BA
tRCD
tRCD
A10
RAa
A0-A9
RAa
tRCD
RBb
CAx
RAb
RBb
CBy
CAz
RAc
DQM
CKE
ax0
DQ
ax1
ax4
ax5
ax6
ax7
by0
by1
Bank #1
Active
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
tRRD
tRRD
Bank #0
by2
Write
Active
AP*
Active
Write
AP*
Write
* AP is the internal precharge start timing
- 26 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tCCD
tCCD
tCCD
CS
tRAS
tRAS
RAS
CAS
WE
BA
tRCD
A10
RAa
A0-A9
RAa
tRCD
RBb
RBb
CAI
CBx
CAy
CAm
CBz
DQM
CKE
tAC
a0
DQ
tAC
tAC
a2
a1
a3
bx0
bx1
Ay0
tAC
Ay1
Ay2
tAC
am0
am1
am2
bz0
bz1
bz2
bz3
tRRD
Bank #0 Active
Bank #1
Read
Active
Read
Read
Precharge
Read
Read
AP*
* AP is the internal precharge start timing
- 27 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)
0
1
2
3
5
4
6
7
8
9
11
10
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRAS
RAS
CAS
WE
BA
tRCD
A10
RAa
A0-A9
RAa
CAy
CAx
DQM
CKE
tAC
DQ
tWR
ax0
Q Q
Bank #0
Active
ax1
ax3
ax2
Q
Q
ax5
ax4
Q
Q
Read
ay1
ay0
D
D
Write
ay2
D
ay3
D
ay4
D
Precharge
Bank #1
- 28 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.9 Auto Precharge Read (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRAS
tRAS
tRP
CAS
WE
BA
tRCD
A10
RAa
A0-A9
RAa
tRCD
RAb
CAw
RAb
CAx
DQM
CKE
tAC
DQ
Bank #0
tAC
aw0
Active
Read
aw1
aw2
bx0
aw3
AP*
Active
Read
bx1
bx2
bx3
AP*
Bank #1
* AP is the internal precharge start timing
- 29 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.10 Auto Precharge Write (Burst Length = 4)
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CS
tRC
tRC
RAS
tRP
tRAS
tRAS
tRP
CAS
WE
BA
tRCD
tRCD
A10
RAa
A0-A9
RAa
RAc
RAb
CAw
RAb
CAx
RAc
DQM
CKE
aw0
DQ
Bank #0
Active
Write
aw1
aw2
aw3
bx0
AP*
Active
bx1
bx2
bx3
AP*
Write
Active
Bank #1
* AP is the internal precharge start timing
- 30 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.11 Auto Refresh Cycle
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tRP
tRC
tRC
CS
RAS
CAS
WE
BA
A10
A0-A9
DQM
CKE
DQ
All Banks
Prechage
Auto
Refresh
Auto Refresh (Arbitrary Cycle)
- 31 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.12 Self Refresh Cycle
CLK
CS
tRP
RAS
CAS
WE
BA
A10
A0-A9
DQM
tCKS
tSB
CKE
tCKS
DQ
tXSR
Self Refresh Cycle
All Banks
Precharge
Self Refresh
Entry
No Operation / Command Inhibit
Self Refresh
Exit
- 32 -
Arbitrary Cycle
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
tRCD
WE
BA
A10
RBa
A0-A9
RBa
CBv
CBw
CBx
CBy
CBz
DQM
CKE
tAC
tAC
DQ
av0
Q
Bank #0 Active
av1
Q
av2
av3
aw0
ax0
ay0
az0
az1
az2
az3
Q
Q
D
D
D
Q
Q
Q
Q
Read
Single Write Read
Bank #1
- 33 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.14 Power Down Mode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
WE
BA
A10
RAa
A0-A9
RAa
RAa
CAa
RAa
CAx
DQM
tSB
tSB
CKE
tCKS
tCKS
DQ
ax0
Active
tCKS
tCKS
ax1
ax2
NOP Read
ax3
Precharge
NOP Active
Precharge Standby
Power Down mode
Active Standby
Power Down mode
Note: The Power Down Mode is entered by asserting CKE "low".
All Input/Output buffers (except CKE buffers) are turned off in the Power Down mode.
When CKE goes high, command input must be No operation at next CLK rising edge.
Violating refresh requirements during power-down may result in a loss of data.
- 34 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.15 Auto-precharge Timing (Read Cycle)
0
1
Read
AP
2
3
4
5
6
7
8
9
10
11
(1) CAS Latency=2
( a ) burst length = 1
Command
Act
tRP
DQ
Q0
( b ) burst length = 2
Command
Read
AP
Act
tRP
DQ
Q0
Q1
( c ) burst length = 4
Command
Read
AP
Act
tRP
DQ
Q0
Q1
Q2
Q3
( d ) burst length = 8
Command
Read
AP
Q0
DQ
Q1
Q2
Q3
Q4
Q5
Q6
Act
tRP
Q7
(2) CAS Latency=3
( a ) burst length = 1
Command
Read
AP
Act
tRP
Q0
DQ
( b ) burst length = 2
Command
Read
AP
Act
tRP
Q0
DQ
Q1
( c ) burst length = 4
Command
Read
AP
Act
tRP
Q0
DQ
Q1
Q2
Q3
( d ) burst length = 8
Command
Read
AP
Act
tRP
Q0
DQ
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Note:
Read
AP
Act
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activ ate command.
When the Auto precharge command is asserted, the period f rom Bank Activ ate command to
the start of internal precgarging must be at leastRAS
t (min).
- 35 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.16 Auto-precharge Timing (Write Cycle)
0
1
2
3
4
5
6
7
8
9
10
11
12
CLK
(1) CAS Latency = 2
(a) burst length = 1
Command
Write
AP
tWR
DQ
Act
tRP
D0
(b) burst length = 2
Command
Write
AP
Act
tWR
DQ
D0
tRP
D1
(c) burst length = 4
Command
AP
Write
DQ
D0
D1
D2
Act
tRP
tWR
D3
(d) burst length = 8
Command
Write
AP
tWR
DQ
D0
D1
D2
D3
D4
D5
D6
Act
tRP
D7
(2) CAS Latency = 3
(a) burst length = 1
Command
Write
AP
Act
tWR
DQ
(b) burst length = 2
Command
tRP
D0
Write
AP
Act
tWR
DQ
D0
tRP
D1
(c) burst length = 4
Command
Write
AP
Act
tWR
DQ
D0
D1
D2
tRP
D3
(d) burst length = 8
Command
Write
AP
tWR
DQ
D0
D1
D2
D3
D4
D5
D6
Act
tRP
D7
Note )
Write
represents the Write with Auto precharge command.
AP
represents the start of internal precharing.
Act
represents the Bank Active command.
When the /auto precharge command is asserted,the period from Bank Activate
command to the start of intermal precgarging must be at least tRAS (min).
- 36 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.17 Timing Chart of Read to Write Cycle
In the case of Burst Length = 4
(1) CAS Latency= 2
0
( a ) Command
1
2
Read
Write
3
4
5
D1
D2
D3
D0
D1
D2
D1
D2
D3
D1
D2
6
7
8
9
10
11
9
10
11
DQM
DQ
D0
Read
( b ) Command
Write
DQM
DQ
D3
(2) CAS Latency= 3
Read
( a ) Command
Write
DQM
D0
DQ
Read
( b ) Command
Write
DQM
D0
DQ
D3
Note: The Output data must be masked by DQM to avoid I/O conflict
11.18 Timing Chart of Write to Read Cycle
In the c as e of B urs t Length=4
0
1
2
3
4
5
6
7
8
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Q0
Q1
Q2
(1) CAS Latency= 2
( a ) Command
Write Read
DQM
DQ
( b ) Command
D0
Read
Write
DQM
DQ
D0
D1
(2) CAS Latency= 3
( a ) Command
Write Read
DQM
DQ
( b ) Command
D0
Write
Read
DQM
DQ
D0
D1
- 37 -
Q3
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command)
0
1
2
3
4
5
6
7
8
9
10
11
(1) Read cycle
( a ) CAS latency =2
C omma nd
Read
BST
Q0
DQ
Q1
Q2
Q0
Q1
Q3
Q4
( b )CAS latency = 3
C omma nd
Read
BST
DQ
Q2
Q3
Q4
(2) Write cycle
C omma nd
DQ
Write
Q0
BST
Q1
Q2
Note:
Q3
Q4
BST
represents the Burst stop command
11.20 Timing Chart of Burst Stop Cycle (Precharge Command)
0
1
2
3
4
5
6
7
8
9
10
11
(1) Read cycle
(a) CAS latency =2
Command
Read
PRCG
DQ
(b) CAS latency =3
Command
Q0
Q1
Q2
Read
Q3
Q4
PRCG
DQ
Q0
Q1
Q2
Q3
Q4
(2) Write cycle
Command
PRCG
Write
tWR
DQM
DQ
Q0
Q1
Q2
Q3
Q4
- 38 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.21 CKE/DQM Input Timing (Write Cycle)
CLK cycle No.
1
2
3
D1
D2
D3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
D5
DQM MASK
D6
CKE MASK
( 1)
CLK cycle No.
1
2
3
D1
D2
D3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
DQM MASK
D5
D6
5
6
7
D4
D5
D6
CKE MASK
( 2)
CLK cycle No.
1
2
3
D1
D2
D3
4
External
CLK
Internal
CKE
DQM
DQ
CKE MASK
( 3)
- 39 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
11.22 CKE/DQM Input Timing (Read Cycle)
CLK cycle No.
1
2
3
4
Q1
Q2
Q3
Q4
6
5
7
External
CLK
Internal
CKE
DQM
DQ
Q6
Open
Open
(1)
CLK cycle No.
1
2
3
Q1
Q2
Q3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
Q6
Q4
Open
(2)
CLK cycle No.
1
2
Q1
Q2
3
4
5
6
7
Q4
Q5
Q6
External
CLK
Internal
CKE
DQM
DQ
Q3
(3)
- 40 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
12. PACKAGE SPECIFICATION
Package Outline VFBGA 60 Ball (6.4 x 10.1 mm2, Ball pitch: 0.65mm, Ø =0.4mm)
BOTTOM VIEW
TOP VIEW
A1 CORNER
Φb
A1 CORNER
7 6 5 4 3 2 1
1 2 3 4 5 6 7
D2
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
e
D
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
e
E2
0.45REF.
E
y
Controlling Dimension: Millimeters
Symbol
0.21REF.
SEATING PLANE
Dimension in mm
MIN
NOM
MAX
MIN
NOM
MAX
A
─
─
1.10
─
─
0.0433
A1
0.27
─
0.37
0.0106
─
0.0145
D
10.0
10.1
10.2
0.3937 0.3976 0.4015
6.50
0.2480 0.2519 0.2559
A1 A
9.10 REF.
D2
Ball Land
Ball Opening
Dimension in inch
E
6.30
6.40
E2
3.90 REF.
y
0.08 REF.
0.3582 REF.
0.1535 REF.
0.0031 REF.
Φb
0.35
0.40
0.45
e
─
0.65
─
0.0145 0.0157 0.0185
─
0.0255
─
Note: Ball Land: 0.45mm / Ball Opening: 0.35mm
- 41 -
Publication Release Date: Mar. 01, 2017
Revision: A01
W9816G6JB
13. REVISION HISTORY
VERSION
A01
DATE
PAGE
DESCRIPTION
Jul. 03, 2014
All
Initial formally datasheet
Mar. 01, 2017
42
Remove ”important notice”
- 42 -
Publication Release Date: Mar. 01, 2017
Revision: A01
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